100mm–300mmDiameter Range
50μm–725μmThickness Range
TTV < 1μmThickness Accuracy
SEMI M1 StandardEdge Profiles

Overview

Sometimes the wafers you have don't match the equipment you run. A 200mm wafer won't fit in a 150mm cassette; a wafer without a notch won't align in a stepper; a wafer with edge damage will generate particles in your furnace. Wafer resizing adapts existing substrates to new form factors — extending material utility and avoiding costly new wafer purchases.

GINECHIP offers comprehensive wafer resizing services: diameter reduction (e.g., 200mm to 150mm or 100mm), flat and notch machining to SEMI standards, edge profile reshaping from one standard to another, thickness thinning and TTV improvement via grinding/lapping/CMP, wafer subdivision into smaller formats, and crystal orientation re-identification for wafers that have lost their orientation reference.

Services

Diameter Reduction

Precision grinding of wafers from a larger to a smaller diameter — for example, converting 200mm wafers to 150mm or 150mm to 100mm. Essential when device fabrication tools only accept a specific wafer diameter, or when repurposing material from one production line to another. Edge profile machined to SEMI standard specifications.

Reduction: 200→150, 200→100, 150→100Other conversions by requestEdge: SEMI standard profileEdge chipping: < 0.3mmConcentricity: < 50μmWafer: Si, SOI, glass, ceramic

Flat &amp; Notch Machining

Precision grinding of wafer primary/secondary flats or notches to SEMI standard specifications. Required when wafers are resized, when orientation flats have been damaged, or when non-standard flat configurations need conversion. Flat orientation accuracy to wafer crystal axis: < 1°.

Primary flat: SEMI M1 standardNotch: SEMI M1 standardOrientation accuracy: < 1°Length/depth per standardPost-machining edge polishWafer: Si, GaAs, InP, SiC

Edge Profile Reshaping

Reprofiling of wafer edges from one SEMI-standard profile to another (e.g., T-profile to R-profile) or from a non-standard to standard profile. Includes edge rounding and polishing to remove edge damage and micro-cracks that can propagate during thermal processing or cause particle generation during handling.

Profiles: T, R, K (SEMI M1)Custom profiles by requestEdge polish: mechanical + CMPEdge roughness: Ra < 0.5μmMicro-crack eliminationPost-process edge inspection

Thickness Thinning &amp; Uniformization

Precision backgrinding, lapping, or chemical-mechanical polishing (CMP) to reduce wafer thickness and improve total thickness variation (TTV). From standard 725μm to target thicknesses as low as 50μm. TTV improvement from > 5μm (as-received) to < 1μm (post-process) for demanding applications.

Method: grinding, lapping, CMPTarget: 50μm–725μmTTV: < 1μm (post-CMP)Bow/warp: within specificationStress relief etch optionalWafer: Si, SOI, glass, SiC

Wafer Splitting &amp; Subdivision

Controlled splitting of large wafers into smaller-diameter wafers or rectangular coupons for specialized applications where full-wafer format is not required. Includes precision dicing or cleaving with edge quality control. Ideal for research labs needing smaller substrates from 200mm or 300mm starting material.

Split: 1 wafer → multiple smallerCircular or rectangular formatsDicing or cleaving optionsEdge quality: minimal chippingCustom sizes: drawing-basedMaterial: Si, SOI, glass

Crystal Orientation Re-Identification

X-ray diffraction (XRD)-based crystal orientation verification and marking for wafers that have lost their original orientation flats or notches during resizing or reclaim processing. Critical to ensure correct crystal direction for anisotropic etching, orientation-dependent epitaxy, and piezoelectric devices.

Method: XRD rocking curveAccuracy: < 0.1°Marking: new flat/notch or laserSi, GaAs, InP, SiC, sapphireReport: orientation confirmedPost-ID: laser mark if needed

Edge Quality & Why It Matters

Wafer edge quality is a critical but often underestimated factor in fab yield. Poor edge profiles — with micro-cracks, chips, or rough surfaces — are primary sources of particle generation during wafer handling and thermal processing. Edge damage can propagate into the active area during high-temperature steps, causing wafer breakage. Our edge profiling and polishing processes eliminate these risks, producing clean, smooth edges compliant with SEMI M1 specifications for T-type, R-type, and K-type profiles. Edge inspection by optical microscopy at 200× magnification is performed on every processed wafer.

Need to Resize or Modify Your Wafers?

Specify your current wafer dimensions, target dimensions, edge profile requirements, and quantity — our team will provide a feasibility assessment and quotation within 24 hours.

ISO 9001:2015SEMI M1Edge InspectionXRD Verified