Compound Semiconductors
Wide-bandgap and III-V substrates for RF, photonics, power electronics, and optoelectronics. Beyond silicon — engineered for performance.
Why Compound Semiconductors?
While silicon dominates volume CMOS manufacturing, compound semiconductors enable device performance that silicon simply cannot match — higher electron mobility (GaAs: 6× Si), wider bandgaps (GaN: 3.4 eV, SiC: 3.26 eV), direct bandgap emission (InP, GaAs), and superior thermal conductivity (SiC: 3× Si).
These properties make compound substrates essential for 5G/mmWave RF front-ends, high-voltage power conversion, datacom photonics, LiDAR illumination, and satellite communication. GINECHIP supplies epi-ready compound semiconductor substrates with full characterization data for production and R&D environments.
Material Portfolio
GaAs (Gallium Arsenide)
Direct bandgap III-V semiconductor with 6× electron mobility of silicon. Dominant substrate for RF power amplifiers, pHEMT switches, and 850nm VCSELs.
GaN-on-SiC
Gallium Nitride epitaxial layers on semi-insulating SiC substrates. The gold standard for high-power RF HEMTs and 5G mmWave front-end modules.
SiC (Silicon Carbide)
Wide-bandgap (3.26 eV) semiconductor with 3× the thermal conductivity of silicon. Enables >650V power MOSFETs and Schottky barrier diodes.
InP (Indium Phosphide)
III-V compound with lattice-matched properties for InGaAs/InAlAs heterostructures. Essential for photonics: DFB lasers, APD detectors, and HBT transistors.
GaN-on-Sapphire
Cost-effective platform for LED manufacturing. GaN epitaxy on sapphire substrates for blue/green/white LEDs and microLED displays.
GaSb / InAs (Antimonides)
Narrow-bandgap III-V semiconductors for mid-IR photodetectors, thermophotovoltaics, and high-speed quantum cascade lasers. Custom ingot growth on request.
Comparative Properties
| Property | Si | GaAs | 4H-SiC | GaN | InP |
|---|---|---|---|---|---|
| Bandgap (eV) | 1.12 | 1.42 | 3.26 | 3.39 | 1.34 |
| Electron Mobility (cm²/V·s) | 1,400 | 8,500 | 1,000 | 1,250 | 5,400 |
| Critical Field (MV/cm) | 0.3 | 0.4 | 2.8 | 3.3 | 0.5 |
| Thermal Conductivity (W/cm·K) | 1.5 | 0.55 | 4.9 | 1.3 | 0.68 |
| Max Operating Temp (°C) | 150 | 200 | 600+ | 400 | 200 |
| Lattice Constant (Å) | 5.431 | 5.653 | 3.073 | 3.189 | 5.869 |
Typical values at 300K. Custom specifications may vary by supplier. Contact us for exact lot-specific data.
Surface Quality & Polishing
All compound substrates are delivered in epi-ready condition — chemically-mechanically polished (CMP) to sub-nanometer RMS roughness, with controlled surface oxide and particle count verified per lot. For GaAs and InP wafers, we offer both polished (undoped epi-ready) and etched (post-epitaxial layer removal) surfaces.
Quality Assurance
Every incoming lot undergoes incoming QC inspection including: XRD rocking curve (FWHM) for crystal quality, Nomarski/optical microscopy for surface defects, Hall-effect measurement for electrical properties, and profilometry for TTV/Bow/Warp. Certificates of Conformance are provided with every shipment.
Need Compound Semiconductor Substrates?
Specify your material, diameter, doping, and quantity — our engineers will provide a detailed quotation within 24 hours.